THE USE OF IMPLANTED AR AS A BINDING-ENERGY REFERENCE - COMMENT

被引：38

作者：

HUGHES, AE

SEXTON, BA

机构：

[1] CSIRO Division of Materials Science and Technology, Clayton, Vic.

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1990年 / 50卷 / 03期

关键词：

D O I：

10.1016/0368-2048(90)87080-8

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The binding energy of the Ar2p 3 2 level of Ar implanted into insulating oxides has been determined via Au calibration. The Ar2p 3 2 binding energy has been demonstrated to be constant at a binding energy of 242.3 ± 0.1 eV for a range of oxides including γ-Al2O3, ZrO2, SiO2 and Y2O3. © 1990.

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页码：C15 / C18

页数：4

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