SURFACE ETCHING KINETICS OF HYDROGEN PLASMA ON INP

[1] HYDROGEN PLASMA-ETCHING OF GAAS OXIDE [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 898 - 900

[2] HYDROGEN PLASMA-ETCHING OF SEMICONDUCTORS AND THEIR OXIDES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (01): : 45 - 50

[3] SURFACE MODIFICATION OF INP BY PLASMA TECHNIQUES USING HYDROGEN AND OXYGEN [J]. THIN SOLID FILMS, 1981, 78 (03) : 271 - 278

[4] TU CW, 1982, APPL SURF SCI

[1] HYDROGEN PLASMA-ETCHING OF GAAS OXIDE [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 898 - 900

[2] HYDROGEN PLASMA-ETCHING OF SEMICONDUCTORS AND THEIR OXIDES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (01): : 45 - 50

[3] SURFACE MODIFICATION OF INP BY PLASMA TECHNIQUES USING HYDROGEN AND OXYGEN [J]. THIN SOLID FILMS, 1981, 78 (03) : 271 - 278

[4] TU CW, 1982, APPL SURF SCI