BROAD-BAND CHARACTERISTICS OF EHF IMPATT DIODES

被引:4
作者
HOLWAY, LH
CHU, SL
机构
关键词
D O I
10.1109/TMTT.1982.1131346
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1933 / 1939
页数:7
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共 12 条
[1]   AVALANCHE RESPONSE-TIME IN GAAS AS DETERMINED FROM MICROWAVE ADMITTANCE MEASUREMENTS [J].
ADLERSTEIN, MG ;
MCCLYMONDS, JW ;
STATZ, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :808-811
[2]  
ADLERSTEIN MG, 1981, 8TH P BIENN C ACT MI
[3]  
ADLERSTEIN MG, UNPUB IEEE T ELECTRO
[4]  
ADLERSTEIN MG, COMMUNICATION
[5]  
GONDA J, 1977, IEEE T MICROWAVE THE, V24, P343
[6]  
HAITZ RH, 1963, IEEE T ELECTRON DEVI, V16, P438
[7]  
HOLWAY LH, 1979, 7TH P BIENN CORN EL, P199
[8]  
HOLWAY LH, 1980, HIGH POWER PULSED AV
[9]   ELECTRON-DRIFT VELOCITY IN N-GAAS AT HIGH ELECTRIC-FIELDS [J].
HOUSTON, PA ;
EVANS, AGR .
SOLID-STATE ELECTRONICS, 1977, 20 (03) :197-204
[10]   OSCILLATOR CIRCUIT WITH CAP STRUCTURES FOR MILLIMETER-WAVE IMPATT DIODES [J].
MISAWA, T ;
KENYON, ND .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1970, MT18 (11) :969-&