AVALANCHE RESPONSE-TIME IN GAAS AS DETERMINED FROM MICROWAVE ADMITTANCE MEASUREMENTS

被引：8

作者：

ADLERSTEIN, MG ^{[1
]}

MCCLYMONDS, JW ^{[1
]}

STATZ, H ^{[1
]}

机构：

[1] RAYTHEON CO,DIV RES,ELECTRO OPT LAB,WALTHAM,MA 02154

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 07期

关键词：

D O I：

10.1109/T-ED.1981.20435

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：808 / 811

页数：4

共 12 条

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[5]

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[7] QUASISTATIC APPROXIMATION FOR SEMICONDUCTOR AVALANCHES [J].

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[8] INTERBAND SCATTERING EFFECTS ON SECONDARY IONIZATION COEFFICIENTS IN GAAS [J].

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[9]

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