IONIZATION RATES FOR ELECTRONS AND HOLES IN GAAS

被引：54

作者：

ITO, M

KAGAWA, S

KANEDA, T

YAMAOKA, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 08期

关键词：

D O I：

10.1063/1.325443

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4607 / 4608

页数：2

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[2] TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GAAS
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[3] IMPACT IONIZATION COEFFICIENTS FOR ELECTRONS AND HOLES IN IN0.14GA0.86AS
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[5] ELECTROABSORPTION AVALANCHE PHOTODIODES
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[6] UNEQUAL ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS
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[J]. APPLIED PHYSICS LETTERS, 1974, 24 (10) : 471 - 474
[7] USE OF A SCHOTTKY-BARRIER TO MEASURE IMPACT IONIZATION COEFFICIENTS IN SEMICONDUCTORS
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[J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 381 - 394