UNEQUAL ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS

被引：66

作者：

STILLMAN, GE ^{[1
]}

WOLFE, CM ^{[1
]}

ROSSI, JA ^{[1
]}

FOYT, AG ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 10期

关键词：

D O I：

10.1063/1.1655016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：471 / 474

页数：4

相关论文

共 16 条

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS
ANDERSON, CL
CROWELL, CR
[J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2267 - &
[2] TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GAAS
CHANG, YJ
SZE, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) : 5392 - &
[3] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT
FOYT, AG
LINDLEY, WT
WOLFE, CM
DONNELLY, JP
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &
[4] IONIZATION RATE IN GAAS DETERMINED FROM PHOTOMULTIPLICATION IN A SCHOTTKY-BARRIER
GLOVER, GH
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3253 - 3256
[5] AVALANCHE BREAKDOWN OF GALLIUM ARSENIDE P-N JUNCTIONS
HALL, R
LECK, JH
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (06) : 529 - &
[6] EFFECTIVE IONIZATION RATE FOR HOT CARRIERS IN GAAS
KRESSEL, H
KUPSKY, G
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 20 (06) : 535 - &
[7] LEE CC, PRIVATE COMMUNICATIO
[8] GAAS SCHOTTKY BARRIER AVALANCHE PHOTODIODES
LINDLEY, WT
PHELAN, RJ
WOLFE, CM
FOYT, AG
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (06) : 197 - +
[9] LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434
[10] AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE PARA JUNCTIONS
LOGAN, RA
CHYNOWETH, AG
COHEN, BG
[J]. PHYSICAL REVIEW, 1962, 128 (06): : 2518 - &