IONIZATION RATES IN (ALXGA1-X)AS

被引：37

作者：

SHABDE, SN

YEH, C

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 11期

关键词：

D O I：

10.1063/1.1658526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4743 / &

相关论文

共 15 条

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
BARAFF, GA
[J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &
[2] COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS
CASEY, HC
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) : 4910 - &
[3] IONIZATION RATES FOR ELECTRONS AND HOLES IN SILICON
CHYNOWETH, AG
[J]. PHYSICAL REVIEW, 1958, 109 (05): : 1537 - 1540
[4] PROPERTIES OF EFFICIENT SILICON-COMPENSATED ALXGA1-XAS ELECTROLUMINESCENT DIODES
KRESSEL, H
HAWRYLO, FZ
ALMELEH, N
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2248 - &
[5] INFECTION ELECTROLUMINESCENCE IN (ALKAPPAGA1-KAPPA)AS DIODES OF GRADED ENERGY GAP
KU, SM
BLACK, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) : 3733 - &
[6] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON
LEE, CA
KLEIMACK, JJ
BATDORF, RL
WIEGMANN, W
LOGAN, RA
[J]. PHYSICAL REVIEW, 1964, 134 (3A): : A761 - +
[7] CHARGE MULTIPLICATION IN GAP P-N JUNCTIONS
LOGAN, RA
WHITE, HG
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3945 - &
[8] CHARGE MULTIPLICATION IN GAP-P-N-JUNCTIONS
LOGAN, RA
CHYNOWETH, AG
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) : 1649 - &
[9] LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434
[10] AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE PARA JUNCTIONS
LOGAN, RA
CHYNOWETH, AG
COHEN, BG
[J]. PHYSICAL REVIEW, 1962, 128 (06): : 2518 - &