INFECTION ELECTROLUMINESCENCE IN (ALKAPPAGA1-KAPPA)AS DIODES OF GRADED ENERGY GAP

被引：37

作者：

KU, SM

BLACK, JF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 10期

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D O I：

10.1063/1.1707915

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：3733 / &

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[1] MICROWAVE OSCILLATIONS IN GAASXP1-X ALLOYS (PULSED DC EXCITATION - E/T)
ALLEN, JW
SHYAM, M
CHEN, YS
PEARSON, GL
[J]. APPLIED PHYSICS LETTERS, 1965, 7 (04) : 78 - &
[2] RECOMBINATION RADIATION IN GAAS
BLACK, J
MAYBURG, S
LOCKWOOD, H
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) : 178 - &
[3] PREPARATION AND PROPERTIES OF ALAS-GAAS MIXED CRYSTALS
BLACK, JF
KU, SM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : 249 - &
[4] BONIN EL, 1965, ELECTRONICS, V38, P98
[5] BONIN EL, 1965, NEREM RECORD, V7, P84
[6] BRAY TE, 1965, ELECTRONICS, V38, P58
[7] P-N JUNCTION LASERS
BURNS, G
NATHAN, MI
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 770 - +
[8] FENNER GE, 1964, PHYS REV, V134, P1113
[9] FOLBERTH OG, 1955, Z NATURFORSCH, VA 10, P502
[10] PRESSURE EFFECTS IN GA (AS1-XPX) ELECTROLUMINESCENT DIODES1 ) GA )AS1-XPX) LASER DIODES EFFICIENCY OF LUMINESCENCE EFFECT OF PRESSURE ON 0-6000 ATM AT 77 DEGREES K E )
FULTON, TA
FITCHEN, DB
FENNER, GE
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (01) : 9 - &