THERMOELECTRIC-POWER OF GAINAS-INP AND GAINAS-A1INAS HETEROJUNCTIONS IN A MAGNETIC-FIELD

被引：7

作者：

BRUMMELL, MA

VUONG, THH

NICHOLAS, RJ

PORTAL, JC

RAZEGHI, M

CHENG, KY

CHO, AY

机构：

[1] CNRS, INST NATL SCI APPL, F-31077 TOULOUSE, FRANCE

[2] CNRS, SERV NATL CHAMPS INTENSES, F-38042 GRENOBLE, FRANCE

[3] THOMSON CSF, CENT RECH LAB, F-91401 ORSAY, FRANCE

[4] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 57卷 / 06期

关键词：

SEMICONDUCTOR MATERIALS - Magnetic Field Effects - THERMOELECTRICITY;

D O I：

10.1016/0038-1098(86)90473-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This work reports measurements of the diagonal thermopower in several heterojunctions based on Ga//. //4//7In//. //5//3As, in high magnetic fields and as a function of temperture. Structures have been studied in which only one or two electric subbands are populated, and in both cases the thermopower oscillations are in phase with the Shubnikov-de Haas oscillations in the resistivity, in accordance with theory. The absolute magnitude of the thermopower is found to be smaller than predicted by theory, and is also highly temperature dependent.

引用

页码：377 / 380

页数：4

共 20 条

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