THIN-FILM DEPOSITION OF BAO BY MOLECULAR-BEAM EPITAXY

被引：9

作者：

MUTHE, KP

VYAS, JC

KOTHIYAL, GP

GANDHI, DP

DEBNATH, AK

GUPTA, SK

SABHARWAL, SC

GUPTA, MK

机构：

[1] Technical Physics and Prototype Engineering Division, BARC, Bombay, 400085, Trombay

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 118卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(92)90066-R

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thin film deposition of BaO using BaO2 as the source material is studied by molecular beam epitaxy. The crystalline nature of the films grown at different substrate temperatures is studied by RHEED. Chemical composition of the films has been ascertained from ESCA measurements carried out without breaking the vacuum. The substrate temperature has been found to govern the composition of the films. Whilst at low growth temperatures metallic Ba films are obtained, those grown at high temperatures (approximately 6000-degrees-C) are of BaO.

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页码：213 / 217

页数：5

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