ELECTRICAL TRANSPORT-PROPERTIES OF THALLIUM-DOPED P-TYPE PB0.8SN0.2TE THIN-FILMS

被引：4

作者：

JAGADISH, C ^{[1
]}

DAWAR, AL ^{[1
]}

MATHUR, PC ^{[1
]}

机构：

[1] UNIV DELHI,DEPT PHYS & ASTROPHYS,DELHI 110007,INDIA

来源：

JOURNAL OF MATERIALS SCIENCE | 1988年 / 23卷 / 03期

关键词：

D O I：

10.1007/BF01154002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1002 / 1008

页数：7

共 33 条

[1] EXTENSION OF AUKERMAN-WILLARDSON 2-BAND HALL COEFFICIENT ANALYSIS [J].

ALLGAIER, RS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) :2429-&

[2]

ALLGAIER RS, 1962, P INT C PHYS SEMICON, P172

[3]

ANDREEV YV, 1975, SOV PHYS SEMICOND+, V9, P1235

[4] BACKSIDE-ILLUMINATED PB1-XSNX TE HETEROJUNCTION PHOTODIODE [J].

ANDREWS, AM ;

LONGO, JT ;

CLARKE, JE ;

GERTNER, ER .

APPLIED PHYSICS LETTERS, 1975, 26 (08) :438-441

[5]

ANTICLIFFE CA, 1972, J APPL PHYS, V44, P4145

[6] HIGH-TEMPERATURE HALL COEFFICIENT IN GAS [J].

AUKERMAN, LW ;

WILLARDSON, RK .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (05) :939-940

[7]

AVERKIN AA, 1973, SOV PHYS SEMICOND, V7, P522

[8]

Calawa A. R., 1973, Journal of Luminescence, V7, P477, DOI 10.1016/0022-2313(73)90080-X

[9]

CHOPRA KL, 1969, THIN FILM PHENOMENA, P435

[10]

DALVEN R, 1969, INFRARED PHYS, V9, P14

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