BACKSIDE-ILLUMINATED PB1-XSNX TE HETEROJUNCTION PHOTODIODE

被引：24

作者：

ANDREWS, AM ^{[1
]}

LONGO, JT ^{[1
]}

CLARKE, JE ^{[1
]}

GERTNER, ER ^{[1
]}

机构：

[1] ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360

来源：

关键词：

D O I：

10.1063/1.88201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：438 / 441

页数：4

共 11 条

[1] ANDREWS AM, 1974, AFALTR74111 REP
[2] EDEN RC, 1973, AFALTR72243 REP
[3] DOUBLE HETEROSTRUCTURE PB1-XSNX TE-PBTE LASERS WITH CW OPERATION AT 77 K
GROVES, SH
NILL, KW
STRAUSS, AJ
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (06) : 331 - 333
[4] Joseph A. S., 1973, Electro-Optical Systems Design, V5, P24
[5] IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE
LONGO, JT
HARRIS, JS
CHU, JC
GERTNER, ER
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 15 (02) : 107 - &
[6] LOW-CARRIER-CONCENTRATION LIQUID EPITAXIAL PB 1-X SNX TE
LONGO, JT
GERTNER, ER
JOSEPH, AS
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (06) : 202 - &
[7] LONGO JT, 1973, J NONMETALS, V1, P321
[8] LONGO JT, 1973, AFALTR7387 REP
[9] PRINCE MB, 1970, SEMICONDUCT SEMIMET, V5, P85
[10] HIGH DETECTIVITY PBXSN1-XTE PHOTOVOLTAIC DIODES
ROLLS, WH
EDDOLLS, DV
[J]. INFRARED PHYSICS, 1973, 13 (02): : 143 - 147