TWO-DIMENSIONAL MONTE-CARLO SIMULATION OF A SUB-MICRON GAAS-MESFET WITH A NONUNIFORMLY DOPED CHANNEL

被引：15

作者：

WILLIAMS, CK

GLISSON, TH

HAUSER, JR

LITTLEJOHN, MA

ABUSAID, MF

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 11期

关键词：

D O I：

10.1016/0038-1101(85)90191-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1105 / 1109

页数：5

共 28 条

[1] MONTE-CARLO SIMULATION OF GUNN DOMAIN FORMATIONS [J].

ABE, M ;

YANAGISAWA, S ;

WADA, O ;

TAKANASHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (01) :70-75

[2]

ABUSAID MF, THESIS N CAROLINA ST

[3] PRINCIPLES OF OPERATION OF SHORT-CHANNEL GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTOR DETERMINED BY MONTE-CARLO METHOD [J].

AWANO, Y ;

TOMIZAWA, K ;

HASHIZUME, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) :448-452

[4]

BOUT FA, 1983, SOLID STATE ELECTRON, V26, P617

[5] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J].

BOZLER, CO ;

ALLEY, GD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1128-1141

[6]

BREWITTTAYLOR CR, 1979, P C NUMERICAL ANAL S

[7] MODELING OF A SUBMICROMETER GATE FIELD-EFFECT TRANSISTOR INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS [J].

CARNEZ, B ;

CAPPY, A ;

KASZYNSKI, A ;

CONSTANT, E ;

SALMER, G .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :784-790

[8] ALCOHOL-CONSUMPTION AND BLOOD-PRESSURE - SURVEY OF THE RELATIONSHIP AT A HEALTH-SCREENING CLINIC [J].

COOKE, KM ;

FROST, GW ;

THORNELL, IR ;

STOKES, GS .

MEDICAL JOURNAL OF AUSTRALIA, 1982, 1 (02) :65-69

[9] A TEMPERATURE MODEL FOR THE GAAS-MESFET [J].

CURTICE, WR ;

YUN, YH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :954-962

[10] ON THE PHYSICS AND MODELING OF SMALL SEMICONDUCTOR-DEVICES .3. TRANSIENT-RESPONSE IN THE FINITE COLLISION-DURATION REGIME [J].

FERRY, DK ;

BARKER, JR .

SOLID-STATE ELECTRONICS, 1980, 23 (06) :545-549

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