STATIC ATOMIC DISPLACEMENTS IN A CDTE EPITAXIAL LAYER ON A GAAS SUBSTRATE

被引：8

作者：

HORNING, RD ^{[1
]}

STAUDENMANN, JL ^{[1
]}

机构：

[1] IOWA STATE UNIV SCI & TECHNOL,US DOE,AMES LAB,DEPT PHYS,AMES,IA 50011

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 21期

关键词：

D O I：

10.1063/1.97807

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1482 / 1484

页数：3

共 20 条

[1] EVIDENCE FOR GAAS SUBSTRATE STRAIN CAUSED BY A CDTE EPITAXIAL LAYER [J].

ARCH, DK ;

SCHMIT, JL ;

HORNING, RN ;

STAUDENMANN, JL .

JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) :149-154

[2] *DIE ABSORPTION VON RONTGENSTRAHLEN IM FALL DER INTERFERENZ [J].

BORRMANN, G .

ZEITSCHRIFT FUR PHYSIK, 1950, 127 (04) :297-323

[3]

BORRMANN G, 1941, PHYSIK Z, V43, P157

[4] HETEROEPITAXIAL GROWTH OF CDTE ON GAAS BY LASER ASSISTED DEPOSITION [J].

CHEUNG, JT ;

KHOSHNEVISAN, M ;

MAGEE, T .

APPLIED PHYSICS LETTERS, 1983, 43 (05) :462-464

[5] MODEL FOR HETEROEPITAXIAL GROWTH OF CDTE ON (100) ORIENTED GAAS SUBSTRATE [J].

COHENSOLAL, G ;

BAILLY, F ;

BARBE, M .

APPLIED PHYSICS LETTERS, 1986, 49 (22) :1519-1521

[6]

COWLEY JM, 1982, DIFFRACTION PHYSICS

[7] CDTE-GAAS(100) INTERFACE - MBE GROWTH, RHEED AND XPS CHARACTERIZATION [J].

FAURIE, JP ;

HSU, C ;

SIVANANTHAN, S ;

CHU, X .

SURFACE SCIENCE, 1986, 168 (1-3) :473-482

[8] X-RAY VIBRATIONAL STUDIES ON (100)-ORIENTED CDTE CRYSTALS AS A FUNCTION OF THE TEMPERATURE (8-350-K) [J].

HORNING, RD ;

STAUDENMANN, JL .

PHYSICAL REVIEW B, 1986, 34 (06) :3970-3979

[9]

HORNING RD, IN PRESS PHYS REV B

[10]

HORNING RD, 1986, THESIS IOWA STATE U

← 1 2 →