THE SOLUBILITY OF CHROMIUM IN GALLIUM-ARSENIDE

被引：5

作者：

DEAL, MD ^{[1
]}

STEVENSON, DA ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 10期

关键词：

D O I：

10.1149/1.2115254

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2343 / 2347

页数：5

共 22 条

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[3]

Bonnet M., 1980, Semi-Insulating III-V Materials, P68

[4] ELECTRICAL COMPENSATION IN SEMI-INSULATING GALLIUM-ARSENIDE [J].

BROZEL, MR ;

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RITSON, A ;

STIRLAND, DJ ;

WHITEHEAD, C .

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[5]

BROZEL MR, UNPUB

[6] THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING [J].

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HAISTY, RW .

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[7]

DEAL MD, UNPUB J PHYS CHEM SO

[8] PHOTOLUMINESCENCE FROM CHROMIUM IN GAAS [J].

DEVEAUD, B ;

FAVENNEC, PN .

SOLID STATE COMMUNICATIONS, 1977, 24 (07) :473-476

[9]

HAISTY RW, 1964, 7TH P INT C PHYS SEM, P1161

[10] CHROMIUM AS A HOLE TRAP IN GAP AND GAAS [J].

KAUFMANN, U ;

SCHNEIDER, J .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :747-748

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