TRANSPORT IN THE INVERSION LAYER OF A MOS-TRANSISTOR - USE OF KUBO-GREENWOOD FORMALISM

被引:27
作者
GHIBAUDO, G
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1986年 / 19卷 / 05期
关键词
D O I
10.1088/0022-3719/19/5/015
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:767 / 780
页数:14
相关论文
共 26 条
[21]   2-SUBBAND SCREENING AND TRANSPORT IN (001)SILICON INVERSION LAYERS [J].
STERN, F .
SURFACE SCIENCE, 1978, 73 (01) :197-206
[22]   CALCULATED TEMPERATURE-DEPENDENCE OF MOBILITY IN SILICON INVERSION-LAYERS [J].
STERN, F .
PHYSICAL REVIEW LETTERS, 1980, 44 (22) :1469-1472
[23]  
STERN F, 1974, CRIT REV SOLID STATE, V5, P499
[24]  
YOSHINO H, 1983, 13TH P EUR SOL STA F, V7, P55
[25]   INTRABAND CONDUCTIVITY AND THERMOPOWER OF SEMICONDUCTORS WITH SLOWLY VARYING GAUSSIAN RANDOM FIELD [J].
ZHUMATII, PG .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 75 (01) :61-72
[26]  
Ziman J. M., 1960, ELECT PHONONS