DIFFERENCES BETWEEN AS-2 AND AS-4 IN THE HOMOEPITAXIAL GROWTH OF GAAS(110) BY MOLECULAR-BEAM EPITAXY

被引：20

作者：

HOLMES, DM ^{[1
]}

BELK, JG ^{[1
]}

SUDIJONO, JL ^{[1
]}

NEAVE, JH ^{[1
]}

JONES, TS ^{[1
]}

JOYCE, BA ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2AY,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 19期

关键词：

D O I：

10.1063/1.114805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The homoepitaxial growth of GaAs(110) thin films by molecular beam epitaxy has been studied in situ by reflection high-energy diffraction. RHEED specular beam intensity oscillations were recorded over a wide range of growth conditions in which the substrate temperature, growth rate, V/III flux ratio and the relative amount of As-2 or As-4 in the incident arsenic beam were varied. These conditions were plotted to produce a phase map of the growth conditions for which specular intensity oscillations were recordable. RHEED oscillations were obtained over a much wider range of growth conditions when using As-2 compared to growth using As-4. It is shown that this is related to the very different incorporation coefficients of the two arsenic species and reflects the requirement of a high arsenic adatom concentration in order to maintain the 1:1 stoichiometry of the nonpolar (110) surface. (C) 1995 American Institute of Physics.

引用

页码：2848 / 2850

页数：3

共 13 条

[11] STRUCTURE OF THE GAAS(110) SURFACE IN AS-RICH CONDITIONS [J].