SUBPICOSECOND REAL-SPACE CHARGE-TRANSFER IN GAAS/ALAS TYPE-II SUPERLATTICES

被引：11

作者：

DEPAULA, AM ^{[1
]}

MACIEL, AC ^{[1
]}

WEBER, G ^{[1
]}

RYAN, JF ^{[1
]}

DAWSON, P ^{[1
]}

FOXON, CT ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report time-resolved anti-Stokes Raman scattering measurements of short-period GaAs/AlAs type II superlattices which reveal directly that q approximately O confined and interface optical phonons are emitted by electrons when they transfer from the GAMMA-valley in the GaAs layers to the X(z) valley in the AlAs layers in structures where the GAMMA-X(z) separation is greater than the optical phonon energy. The transfer time is estimated from the risetime of the non-equilibrium phonon population to be congruent-to 1 ps.

引用

页码：B120 / B123

页数：4

共 19 条

[1]

Dawson P., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V792, P208, DOI 10.1117/12.940842

[2] EXPERIMENTAL-STUDY OF THE GAMMA-X ELECTRON-TRANSFER IN TYPE-II (AL,GA)AS/ALAS SUPERLATTICES AND MULTIPLE-QUANTUM-WELL STRUCTURES [J].