HOMOGENEOUS-LINEWIDTH DEPENDENCE OF RESONANT RAMAN-SCATTERING IN GAAS QUANTUM-WELLS

被引：14

作者：

SHIELDS, AJ ^{[1
]}

SMITH, GO ^{[1
]}

MAYER, EJ ^{[1
]}

ECCLESTON, R ^{[1
]}

KUHL, J ^{[1
]}

CARDONA, M ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, D-70506 STUTTGART, GERMANY

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.48.17338

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate the LO-phonon Raman intensity in GaAs/AlAs multiple quantum wells to be inversely proportional to the exciton homogeneous linewidth for photon energies resonant with the bandedge exciton. The strongest Raman scattering is seen at the low-energy side of the exciton peak, where the homogeneous linewidth is narrowest. The energy dependence of the linewidth deduced from the resonance Raman profile agrees well with that measured directly by degenerate-four-wave mixing.

引用

页码：17338 / 17342

页数：5

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