SINGLE MICROMACHINED EMITTER CHARACTERISTICS

被引：4

作者：

TRINGIDES, MC ^{[1
]}

SEYMOUR, P ^{[1
]}

JACOBS, K ^{[1
]}

BUSTA, HH ^{[1
]}

POGEMILLER, JD ^{[1
]}

机构：

[1] AMOCO TECHNOL CO,NAPERVILLE,IL 60566

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 02期

关键词：

D O I：

10.1116/1.586868

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The emission from a single, lateral micromachined W protrusion on a silica substrate is examined to identify important factors controlling the emission of commercially interesting field emission arrays (FEAs). From the emission pattern of the single tip obtained on a phosphor screen and the I-V characteristics it was concluded that mini protrusions of a few hundred angstroms are responsible for the emission. Large fluctuations in the emission current are caused by absorption-desorption events from the background gas. Comparison of the I-V characteristics and the fluctuations of the single tip to gated FEAs (under the assumption that similar miniprotrusions are responsible for the emission in other geometries) suggests that only a fraction of the tips is emitting.

引用

页码：396 / 399

页数：4

共 8 条

[1]

BETSUI K, 1991, UNPUB IVMC 91 NAG

[2]

Busta H. H., 1992, Journal of Micromechanics and Microengineering, V2, P43, DOI 10.1088/0960-1317/2/2/001

[3]

Gomer R., 1961, FIELD EMISSION FIELD

[4] LOW-OPERATION-VOLTAGE COMB-SHAPED FIELD EMITTER ARRAY [J].

ITOH, J ;

TSUBURAYA, K ;

KANEMARU, S ;

WATANABE, T ;

ITOH, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (7A) :L884-L886

[5]

ITOH J, 1993, UNPUB J VACUUM SCI T, V11

[6]

KANEMARU S, 1993, UNPUB J VACUUM SCI T, V11

[7] FIELD-EMISSION CATHODE ARRAY DEVELOPMENT FOR HIGH-CURRENT-DENSITY APPLICATIONS [J].

SPINDT, CA ;

HOLLAND, CE ;

STOWELL, RD .

APPLIED SURFACE SCIENCE, 1983, 16 (1-2) :268-276

[8]

1993, 5TH INT VAC MICR C V, V11

← 1 →