ION-IMPLANTATION IN HIGH-TEMPERATURE SUPERCONDUCTING FILMS

被引：12

作者：

MA, QY ^{[1
]}

WONG, A ^{[1
]}

CAROLAN, JF ^{[1
]}

HARDY, WN ^{[1
]}

KATO, H ^{[1
]}

HUI, D ^{[1
]}

JAEGER, NAF ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER,BC V6T 1Z4,CANADA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1995年 / 5卷 / 02期

关键词：

D O I：

10.1109/77.402772

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reactive Ion Implantation (RII) has been used to inhibit superconductivity in oxide superconductor materials. By introducing ions, which are chemically reactive with oxygen, into a High Temperature Superconductor (HTS) oxide film, the conductivity of the material may be inhibited by the interaction of the implanted ions with the oxygen in the oxide. Both Si and B ions, with doses ranging from 1 x 10(15)-1 x 10(17)/cm(2), were implanted into epitaxial YBCO films with injection energies ranging from 20 - 180 keV, depending on the film thickness. The implanted ions do not alter the overall crystal structure of the HTS film, but does inhibit the electrical conductivity and diamagnetism. Multiple ion implantations have also been employed to achieve uniform ion distributions.

引用

页码：1181 / 1184

页数：4

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