THE INFLUENCE OF GATE EDGE SHAPE ON THE DEGRADATION IN HOT-CARRIER STRESSING OF N-CHANNEL TRANSISTORS

被引：8

作者：

DOYLE, BS

BERGONZONI, C

BOUDOU, A

机构：

[1] BULL SA,F-78340 LES CLAYES BOIS,FRANCE

[2] SGS THOMSON MICROELECTR,I-20041 AGRATE BRIANZA,ITALY

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 07期

关键词：

D O I：

10.1109/55.103608

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The hot-carrier properties of planar and graded gate structures (upturning of the gate edge in the gate overlap region) have been examined on a n-MOS transistors. It has been found that the type of degradation suffered by each type of device depends on the shape of the gate edge. The nongraded gate (NGG) devices degrade chiefly by a V(t) shift, whereas the graded gate (GG) devices show a pronounced transconductance decay, with practically no V(t) shift. It is suggested that the damage is situated in the gate overlap region, and that the different degradations result from a weaker field control of the gate over the degraded region leading to a series resistance type of effect in the case of the GG structure. This is supported by 2-D simulations.

引用

收藏

页码：363 / 365

页数：3

相关论文

共 13 条

[1] HOT CARRIER STRESS-INDUCED CHANGES IN MOST TRANSCONDUCTANCE STRUCTURE [J].

BERGONZONI, C ;

BENECCHI, R ;

CAPRARA, P .

JOURNAL DE PHYSIQUE, 1988, 49 (C-4) :779-782

[2]

BERGONZONI C, 1987, SEP ESSDERC C P BOLG, P721

[3] INTERFACE STATE CREATION AND CHARGE TRAPPING IN THE MEDIUM-TO-HIGH GATE VOLTAGE RANGE (VD/2-GREATER-THAN-OR-EQUAL-TO-VG-GREATER-THAN-OR-EQUAL-TO-VD) DURING HOT-CARRIER STRESSING OF N-MOS TRANSISTORS [J].

DOYLE, B ;

BOURCERIE, M ;

MARCHETAUX, JC ;

BOUDOU, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :744-754

[4] THE GENERATION AND CHARACTERIZATION OF ELECTRON AND HOLE TRAPS CREATED BY HOLE INJECTION DURING LOW GATE VOLTAGE HOT-CARRIER STRESSING OF N-MOS TRANSISTORS [J].

DOYLE, BS ;

BOURCERIE, M ;

BERGONZONI, C ;

BENECCHI, R ;

BRAVIS, A ;

MISTRY, KR ;

BOUDOU, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (08) :1869-1876

[5] TWO-DIMENSIONAL MODELING OF LOCALLY DAMAGED SHORT-CHANNEL MOSFETS OPERATING IN THE LINEAR REGION [J].

HADDARA, H ;

CRISTOLOVEANU, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :378-385

[6] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].

HU, CM ;

TAM, SC ;

HSU, FC ;

KO, PK ;

CHAN, TY ;

TERRILL, KW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :375-385

[7]

Ko P. K., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P88

[8] DYNAMIC BEHAVIOR OF THE BUILDUP OF FIXED CHARGE AND INTERFACE STATES DURING HOT-CARRIER INJECTION IN ENCAPSULATED MOSFETS [J].

MEYER, WG ;

FAIR, RB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) :96-103

[9] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J].

NING, TH ;

COOK, PW ;

DENNARD, RH ;

OSBURN, CM ;

SCHUSTER, SE ;

YU, HN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :346-353

[10]

Poorter T., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P100