SILVER DISTRIBUTION IN WET-SENSITIZED AS10GE22.5SE67.5 FILMS AFTER ELECTRON-BEAM EXPOSURE

被引：3

作者：

LIANG, YC

TADA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.341863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1378 / 1383

页数：6

共 29 条

[1]

Balasubramanyam K., 1983, Microelectronics Journal, V14, P35, DOI 10.1016/S0026-2692(83)80167-0

[2] ELECTRON-BEAM INVESTIGATION AND USE OF GE-SE INORGANIC RESIST [J].

CHEN, AS ;

ADDIEGO, G ;

LEUNG, W ;

NEUREUTHER, AR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :398-402

[3] ELECTRON-DIFFRACTION STUDIES OF AG PHOTODOPING IN GEXSE1-X GLASS-FILMS [J].

CHEN, CH ;

TAI, KL .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :605-607

[4]

DOANE DA, 1982, P S INORGANIC RESIST, V829

[5] ELECTRON-SPECTROSCOPY AND DIFFRACTION STUDIES OF METAL CONTACT REACTIONS IN AMORPHOUS CHALOCOGENIDES [J].

FITZGERALD, AG ;

MCHARDY, CP .

SURFACE SCIENCE, 1985, 162 (1-3) :568-578

[6] KINETICS OF PHOTO-DISSOLUTION OF AG IN AMORPHOUS AS2S3 FILMS [J].

GOLDSCHMIDT, D ;

RUDMAN, PS .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 22 (02) :229-243

[7]

KOSTYSHIN MT, 1966, FIZ TVERD TELA+, V8, P451

[8]

LIANG YC, IN PRESS THIN SOLID

[9] AG PHOTODOPING OF AMORPHOUS CHALCOGENIDES [J].

LIS, SA ;

LAVINE, JM .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :675-677

[10]

LIS SA, 1983, P SOC PHOTO-OPT INST, V393, P34, DOI 10.1117/12.935091

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