PHOTOVOLTAIC EFFECT IN A METAL-SEMICONDUCTOR JUNCTION

被引：17

作者：

BUJATTI, M

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 04期

关键词：

D O I：

10.1109/PROC.1965.3763

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：397 / &

共 6 条

[1] MEASUREMENTS OF INJECTION RATIO OF POINT CONTACTS ON GERMANIUM
BANBURY, PC
HOUGHTON, J
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (01): : 17 - 21
[2] THEORY OF RELATION BETWEEN HOLE CONCENTRATION AND CHARACTERISTICS OF GERMANIUM POINT CONTACTS
BARDEEN, J
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1950, 29 (04): : 469 - 495
[3] BUJATTI M, UNPUBLISHED
[4] HENISCH HK, 1957, RECTIFYING SEMICONDU, P245
[5] HALL-EFFECT STUDIES IN DEPOSITED CDS THIN FILMS
MULLER, RS
WATKINS, BG
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (04) : 425 - &
[6] TAUC J, 1962, PHOTO THERMOELECTRIC, P129