ELECTRON-HOLE PLASMA-DIFFUSION IN DIRECT-GAP SEMICONDUCTORS

被引：6

作者：

GUZZI, M

STAEHLI, JL

CAPIZZI, M

LOGAN, RA

机构：

[1] ECOLE POLYTECH FED LAUSANNE,INST PHYS APPL,PH ECUBLENS,CH-1015 LAUSANNE,SWITZERLAND

[2] UNIV ROME LA SAPIENZA,DEPARTIMENTO FIS,I-00185 ROME,ITALY

[3] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

EUROPHYSICS LETTERS | 1986年 / 2卷 / 07期

关键词：

D O I：

10.1209/0295-5075/2/7/009

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：547 / 554

页数：8

共 16 条

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[8] OPTICAL-PROPERTIES OF HIGHLY EXCITED DIRECT GAP SEMICONDUCTORS [J].

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[9]

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[10] ELECTRON-HOLE PLASMA EXPANSION IN THE DIRECT-BAND-GAP SEMICONDUCTORS CDS AND CDSE [J].

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