EVIDENCE FOR 2 PINNING MECHANISMS WITH NOBLE-METALS ON INP(110)

被引：18

作者：

CAO, R

MIYANO, K

LINDAU, I

SPICER, WE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.575811

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：861 / 864

页数：4

共 25 条

[21] INITIAL-STAGES OF SCHOTTKY-BARRIER FORMATION - TEMPERATURE EFFECTS
STILES, K
KAHN, A
KILDAY, DG
MARGARITONDO, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 987 - 991
[22] SCHOTTKY-BARRIER HEIGHTS AND THE CONTINUUM OF GAP STATES
TERSOFF, J
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (06) : 465 - 468
[23] THEORY OF SEMICONDUCTOR HETEROJUNCTIONS - THE ROLE OF QUANTUM DIPOLES
TERSOFF, J
[J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4874 - 4877
[24] METAL-GASE AND METAL-INP INTERFACES - SCHOTTKY-BARRIER FORMATION AND INTERFACIAL REACTIONS
WILLIAMS, RH
MCKINLEY, A
HUGHES, GJ
MONTGOMERY, V
MCGOVERN, IT
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 594 - 598
[25] INTERFACE POTENTIAL CHANGES AND SCHOTTKY BARRIERS
ZHANG, SB
COHEN, ML
LOUIE, SG
[J]. PHYSICAL REVIEW B, 1985, 32 (06): : 3955 - 3957