CHARACTERIZATION OF CONDUCTING GAAS MULTILAYERS BY INFRARED-SPECTROSCOPY AT OBLIQUE-INCIDENCE

被引：11

作者：

GROSSE, P ^{[1
]}

HARBECKE, B ^{[1
]}

HEINZ, B ^{[1
]}

JANTZ, W ^{[1
]}

MAIER, M ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 50卷 / 01期

关键词：

78.20; 78.65;

D O I：

10.1007/BF00323946

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical and geometric properties of GaAs multilayer structures are measured nondestructively by infrared reflectance spectroscopy (50-5000 cm-1). Using oblique incidence and both s- and p-polarizations of the probing beam, carrier concentration and thickness of the epitactic films as well as the carrier concentration of the GaAs substrate are determined. The main structures in the spectra are due to phonon reststrahlen bands, Fabry-Perot interferences and the zeros of the dielectric function leading to dips in the reflectance (Berreman Mode). The results compare favorably with a depth-resolved secondary ion mass spectrometric (SIMS) sample analysis. The range of applicability of the method is discussed. © 1990 Springer-Verlag.

引用

页码：7 / 12

页数：6

共 6 条

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[2]

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[5]

NARUSAWA T, 1984, I PHYS C SER, V74, P127

[6]

SAALMULLER JD, 1987, THESIS RWTH AACHEN

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