GROUND-STATE ENERGY OF AN EXCITON BOUND TO AN IONIZED DONOR IMPURITY IN SEMICONDUCTOR QUANTUM-WELLS

被引：13

作者：

STAUFFER, L

STEBE, B

机构：

[1] UNIV METZ,CTR LORRAIN OPT & ELECTRON SOLIDES,1 BD ARAGO,F-57070 METZ,FRANCE

[2] ECOLE SUPER ELECT,METZ,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1991年 / 80卷 / 12期

关键词：

D O I：

10.1016/0038-1098(91)90403-I

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The ground state energy of an exciton bound to an ionized hydrogenic donor impurity placed at the centre of a semiconductor quantum well with finite barriers is calculated variationally as a function of the well width and the effective mass ratio of the electron and the hole within the envelope function approximation. For the GaAs/Ga1-x Alx As system with x = 0.15 and x = 0.30 the energy is minimum for a well width near 50 Angstroms. This minimum is comprised between the values obtained in the 2D and 3D limits.

引用

页码：983 / 985

页数：3

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