EXPLICIT C-INFINITY-CONTINUOUS AND GENERAL-MODEL FOR NMOSFETS

被引：5

作者：

INIGUEZ, B

MORENO, EG

机构：

[1] Dept. of Physics, UIB, Palma de Mallorca, 07004, Carretera de Valldemossa

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 11期

关键词：

MODELING; FIELD-EFFECT TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930693

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An explicit and single-piece model for nMOSFETs is presented. The drain current and total charges are C(infinity)-continuous under all regions of normal operation. Good agreement has been found with HSPICE simulations. The model also improves the smoothness at the transitions between different regions, and hence the convergence.

引用

页码：1036 / 1037

页数：2

共 9 条

[1] UNIFIED CHARGE CONTROL MODEL AND SUBTHRESHOLD CURRENT IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS [J].