LOW-TEMPERATURE EPITAXY OF SILICON BY SUBLIMATION ONTO THIN ALLOY LAYERS

被引：9

作者：

FILBY, JD

NIELSEN, S

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1965年 / 112卷 / 05期

关键词：

D O I：

10.1149/1.2423595

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：535 / &

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[2] FILBY JD, 1964, C ELECTRONIC MATERIA
[3] THIN ALLOY ZONE CRYSTALLIZATION - CONSTITUTIONAL SUPERCOOLING IN MOVING ALLOY ZONES
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[J]. SOLID STATE COMMUNICATIONS, 1964, 2 (07) : 201 - 203
[4] VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH ( NEW METHOD GROWTH CATALYSIS FROM IMPURITY WHISKER EPITAXIAL + LARGE CRYSTALS SI E )
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ELLIS, WC
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (05) : 89 - &