ION BEAMS AND SOLID STATE PHYSICS

被引：18

作者：

MCCALDIN, JO

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1965年 / 38卷 / DEC期

关键词：

D O I：

10.1016/0029-554X(65)90125-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：153 / &

共 42 条

[21] SOLUBILITY OF SODIUM IN SILICON [J].

MCCALDIN, JO ;

LITTLE, MJ ;

WIDMER, AE .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (07) :1119-&

[22] SILICON HEAVILY DOPED BY ENERGETIC CESIUM IONS [J].

MCCALDIN, JO ;

WIDMER, AE .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (09) :1073-&

[23] KEV CHANNELING AND THERMOCHEMICAL PROPERTIES OF INTERSTITIAL IMPURITIES [J].

MCCALDIN, JO ;

BRINKMAN, JA .

PHYSICS LETTERS, 1965, 17 (03) :221-&

[24] DIFFERING RESULTS OBTAINED IN DOPING OF SEMICONDUCTORS BY ENERGETIC IONS [J].

MCCALDIN, JO ;

WIDMER, AE .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1985-&

[25]

PARSONS JR, 1965, B AM PHYS SOC, V10, P334

[26]

PAVLOV PV, 1965, SOV PHYS-SOLID STATE, V6, P2577

[27] DIFFUSION RATE OF LI IN SI AT LOW TEMPERATURES [J].

PELL, EM .

PHYSICAL REVIEW, 1960, 119 (04) :1222-1225

[28] SOLUBILITY OF LITHIUM IN GERMANIUM [J].

PELL, EM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 3 (1-2) :74-76

[29] SOLUBILITY OF LITHIUM IN SILICON [J].

PELL, EM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 3 (1-2) :77-81

[30]

REISS H, 1965, PROGRESS SOLID ST ED, pCH2

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