BORON-DOPING EFFECTS ON THE ELECTRICAL-PROPERTIES OF HIGH-DEPOSITION RATE AMORPHOUS-SILICON

被引：4

作者：

KAKINUMA, H

NISHIKAWA, S

WATANABE, T

NIHEI, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 06期

关键词：

D O I：

10.1063/1.335914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2413 / 2415

页数：3

共 16 条

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