TEMPERATURE-DEPENDENCE OF EXCITON LIFETIMES IN GAAS/ALGAAS MULTI QUANTUM WELLS

被引：8

作者：

PETER, G

FELDMANN, J

GOBEL, EO

MOORE, K

DAWSON, P

FOXON, C

ELLIOTT, RJ

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

[2] UNIV OXFORD,DEPT THEORET PHYS,OXFORD OX1 3NP,ENGLAND

来源：

JOURNAL DE PHYSIQUE | 1987年 / 48卷 / C-5期

关键词：

D O I：

10.1051/jphyscol:19875110

中图分类号：

学科分类号：

摘要：

引用

页码：517 / 520

页数：4

共 6 条

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[2] LOW-TEMPERATURE EXCITON TRAPPING ON INTERFACE DEFECTS IN SEMICONDUCTOR QUANTUM WELLS [J].

BASTARD, G ;

DELALANDE, C ;

MEYNADIER, MH ;

FRIJLINK, PM ;

VOOS, M .

PHYSICAL REVIEW B, 1984, 29 (12) :7042-7044

[3]

CHEMLA DS, 1983, HELV PHYS ACTA, V56, P607

[4] SINGLE MONOLAYER WELL SIZE FLUCTUATIONS IN THE LUMINESCENCE OF GAAS-GAALAS SUPERLATTICES [J].

DEVEAUD, B ;

EMERY, JY ;

CHOMETTE, A ;

LAMBERT, B ;

BAUDET, M .

SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (03) :205-208

[5] OPTICAL DEPHASING OF HOMOGENEOUSLY BROADENED TWO-DIMENSIONAL EXCITON-TRANSITIONS IN GAAS QUANTUM-WELLS [J].

SCHULTHEIS, L ;

HONOLD, A ;

KUHL, J ;

KOHLER, K ;

TU, CW .

PHYSICAL REVIEW B, 1986, 34 (12) :9027-9030

[6]

WEISBUCH C, 1982, SOLID STATE COMMUN, V49, P930

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