ELECTRIC-FIELD EFFECTS ON INTERBAND TRANSITIONS

被引:23
作者
AYMERICH, F
BASSANI, F
机构
来源
NUOVO CIMENTO B | 1967年 / 48卷 / 02期
关键词
D O I
10.1007/BF02712196
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:358 / &
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共 42 条
[21]  
KELDYSH LV, 1958, ZH EKSP TEOR FIZ, V34, P1138
[22]   OPTICAL ABSORPTION EDGE IN GAAS AND ITS DEPENDENCE ON ELECTRIC FIELD [J].
MOSS, TS .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2136-&
[23]   PHONON-ASSISTED OPTICAL ABSORPTION IN AN ELECTRIC FIELD [J].
PENCHINA, CM .
PHYSICAL REVIEW, 1965, 138 (3A) :A924-&
[24]  
PHILIPP HR, 1965, PHYS REV, V138, pA197
[25]   OPTICAL-FIELD EFFECT ON THRESHOLDS SADDLE-POINT EDGES AND SADDLE-POINT EXCITIONS [J].
PHILLIPS, JC ;
SERAPHIN, BO .
PHYSICAL REVIEW LETTERS, 1965, 15 (03) :107-&
[26]  
PHILLIPS JC, 1966, 34 REND SIF COURS, P316
[27]  
SEITZ F, 1940, MODERN THEORY SOLIDS, P313
[28]   FIELD EFFECT OF REFLECTANCE IN SILICON [J].
SERAPHIN, BO ;
BOTTKA, N .
PHYSICAL REVIEW LETTERS, 1965, 15 (03) :104-&
[29]   OPTICAL FIELD EFFECT IN SILICON [J].
SERAPHIN, BO .
PHYSICAL REVIEW, 1965, 140 (5A) :1716-&
[30]   FRANZ-KELDYSH EFFECT ABOVE FUNDAMENTAL EDGE IN GERMAINIUM [J].
SERAPHIN, BO ;
HESS, RB .
PHYSICAL REVIEW LETTERS, 1965, 14 (05) :138-&