OBSERVATION OF FREE-EXCITON 2-ELECTRON TRANSITIONS IN WAVELENGTH-DERIVATIVE ABSORPTION-SPECTRA OF IMPURITY-DOPED SILICON

被引:10
作者
NISHINO, T [1 ]
HAMAKAWA, Y [1 ]
机构
[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA,JAPAN
来源
PHYSICAL REVIEW B | 1975年 / 12卷 / 12期
关键词
D O I
10.1103/PhysRevB.12.5771
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5771 / 5779
页数:9
相关论文
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