EFFECTS OF DIELECTRIC MISMATCH ON SHALLOW DONORS AND ACCEPTORS IN A SPHERICAL GAAS-GA1X-ALXAS QUANTUM-DOT

被引:19
作者
DENG, ZY [1 ]
GUO, JK [1 ]
LAI, TR [1 ]
机构
[1] CHINESE ACAD SCI,SHANGHAI INST CERAM,SHANGHAI 200050,PEOPLES R CHINA
关键词
D O I
10.1088/0953-8984/6/30/013
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We calculate the effects of dielectric mismatch on shallow donors and acceptors in a spherical GaAs-Al1-xGaxAs quantum dot for both a finite barrier and an infinitely high barrier using the variational approach. The results have shown that the addition of dielectric mismatch enhances impurity binding energies considerably, especially when the radius of the quantum dot is small. The results also showed that the effects of dielectric mismatch on donors are comparable with those on acceptors, and the corresponding effects for an infinitely high barrier are larger than for a finite barrier.
引用
收藏
页码:5949 / 5955
页数:7
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