ESTIMATE OF IMAGE-POTENTIAL PERTURBATION ON THE NORMAL INVERSE AND DIRECT PHOTOEMISSION YIELDS

被引：13

作者：

CAPPELLINI, G

DELSOLE, R

机构：

[1] Dipartimento di Fisica, 2a Università di Roma Tor Vergata, 00173 Roma, via E. Carnevale

来源：

SOLID STATE COMMUNICATIONS | 1991年 / 79卷 / 02期

关键词：

D O I：

10.1016/0038-1098(91)90086-B

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of the image-potential perturbation on the direct and inverse angle-resolved normal photoemission is evaluated for semiconductor surfaces, from the effective-mass equation using a classical dielectric picture. For the Si(1, 1, 1) and GaAs(1, 1, 0) surfaces, in inverse photoemission, shifts of the order of tens of meV are evaluated for the first peak in the final photon yields.

引用

页码：185 / 189

页数：5

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