GIANT QUASI-PARTICLE SHIFTS OF SEMICONDUCTOR SURFACE-STATES

被引：30

作者：

BECHSTEDT, F ^{[1
]}

DELSOLE, R ^{[1
]}

机构：

[1] UNIV ROMA TOR VERGATA 2,DIPARTIMENTO FIS,I-00173 ROME,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 74卷 / 01期

关键词：

D O I：

10.1016/0038-1098(90)90206-Q

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The differences between the energetical positions of surface bands in quasiparticle and local-density approximations are calculated taking into account the different screening properties of a semiconductor and of an electron gas of the same average density. Gap corrections of the order of 1.5 eV are computed for GaP and GaAs (1 1 0) surfaces, in good agreement with experiment. © 1990.

引用

页码：41 / 44

页数：4

共 21 条

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