ELECTRONIC-STRUCTURE OF III-V SEMICONDUCTORS AND ALLOYS USING SIMPLE ORBITALS

被引：59

作者：

CHEN, AB ^{[1
]}

SHER, A ^{[1
]}

机构：

[1] SRI INT,MENLO PK,CA 94025

来源：

PHYSICAL REVIEW B | 1980年 / 22卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.22.3886

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3886 / 3896

页数：11

共 31 条

[1]

[Anonymous], ELECTRONIC STRUCTURE

[2] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J].

ASPNES, DE .

PHYSICAL REVIEW B, 1976, 14 (12) :5331-5343

[3] EFFECT OF DISORDER ON CONDUCTION-BAND EFFECTIVE MASS, VALENCE-BAND SPIN-ORBIT SPLITTING, AND DIRECT BAND GAP IN III-V ALLOYS [J].

BEROLO, O ;

WOOLLEY, JC ;

VANVECHT.JA .

PHYSICAL REVIEW B, 1973, 8 (08) :3794-3798

[4] PSEUDOPOTENTIAL CALCULATIONS FOR (GAAS)1-(ALAS)1 AND RELATED MONOLAYER HETEROSTRUCTURES [J].

CARUTHERS, E ;

LINCHUNG, PJ .

PHYSICAL REVIEW B, 1978, 17 (06) :2705-2718

[5] TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS [J].

CHADI, DJ ;

COHEN, ML .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (01) :405-419

[6] LOCALIZED-ORBITAL DESCRIPTION OF WAVE-FUNCTIONS AND ENERGY-BANDS IN SEMICONDUCTORS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1977, 16 (08) :3572-3578

[7] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[8] GAP VARIATION IN SEMICONDUCTOR ALLOYS AND COHERENT-POTENTIAL APPROXIMATION [J].

CHEN, AB ;

SHER, A .

PHYSICAL REVIEW LETTERS, 1978, 40 (13) :900-903

[9] VALENCE-BAND STRUCTURES OF III-V COMPOUNDS AND ALLOYS BOND-ORBITAL AND COHERENT-POTENTIAL APPROXIMATIONS [J].

CHEN, AB ;

SHER, A .

PHYSICAL REVIEW B, 1978, 17 (12) :4726-4743

[10]

Cohen M. L., 1970, Solid state physics: advances in research and applications, P37, DOI 10.1016/S0081-1947(08)60070-3

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