PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED TUNGSTEN THIN-FILMS ON SILICON-WAFERS

被引：17

作者：

DIEM, M

FISK, M

GOLDMAN, J

机构：

来源：

关键词：

D O I：

10.1016/0040-6090(83)90005-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：39 / 43

页数：5

共 7 条

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BRYANT, WA
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[3] TUNGSTEN CARBIDE BY PYROLYSIS OF TUNGSTEN HEXACARBONYL
HURD, DT
MCENTEE, HR
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[6] SHAW JM, 1970, RCA REV JUN, P306
[7] SINHA AK, 1983, 1ST P INT S VER LARG, V82, P173