THEORETICAL-STUDY OF HOLE TRANSPORT IN ZNSE

被引:42
作者
RUDA, HE
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10.1063/1.337041
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O59 [应用物理学];
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页码:3516 / 3526
页数:11
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共 71 条
[61]   ELECTRON-MOBILITY AND FREE-CARRIER ABSORPTION IN GAAS - DETERMINATION OF THE COMPENSATION RATIO [J].
WALUKIEWICZ, W ;
LAGOWSKI, L ;
JASTRZEBSKI, L ;
LICHTENSTEIGER, M ;
GATOS, HC .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :899-908
[62]   ELECTRON-MOBILITY IN N-TYPE GAAS AT 77-K - DETERMINATION OF THE COMPENSATION RATIO [J].
WALUKIEWICZ, W ;
LAGOWSKI, J ;
GATOS, HC .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :769-770
[63]  
WALUKIEWICZ W, 1982, 2ND P SEM 3 5 MAT C, P122
[64]   POLAR MOBILITY OF HOLES IN III-V COMPOUNDS [J].
WILEY, JD .
PHYSICAL REVIEW B, 1971, 4 (08) :2485-&
[65]   VALENCE-BAND DEFORMATION POTENTIALS FOR III-V COMPOUNDS [J].
WILEY, JD .
SOLID STATE COMMUNICATIONS, 1970, 8 (22) :1865-&
[66]   LATTICE MOBILITY OF HOLES IN III-V-COMPOUNDS [J].
WILEY, JD ;
DIDOMENICO, M .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (02) :427-+
[67]   SHALLOW N-ACCEPTOR IN N+-IMPLANTED ZNSE [J].
WU, ZL ;
MERZ, JL ;
WERKHOVEN, CJ ;
FITZPATRICK, BJ ;
BHARGAVA, RN .
APPLIED PHYSICS LETTERS, 1982, 40 (04) :345-346
[68]   ELECTRICAL AND PHOTO-LUMINESCENCE PROPERTIES OF ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY - SUBSTRATE-TEMPERATURE EFFECT [J].
YAO, T ;
OGURA, M ;
MATSUOKA, S ;
MORISHITA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03) :L144-L146
[69]  
YONEDA K, 1985, APPL PHYS LETT, V45, P1300
[70]  
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