STUDY OF BORON-NITRIDE GATE INSULATORS GROWN BY LOW-TEMPERATURE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION ON INP

被引：18

作者：

BATH, A ^{[1
]}

VANDERPUT, PJ ^{[1
]}

SCHOONMAN, J ^{[1
]}

LEPLEY, B ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL,INORGAN CHEM LAB,2628 BL DELFT,NETHERLANDS

来源：

APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90426-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：135 / 140

页数：6

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