MECHANISM OF ION SENSITIVE FIELD-EFFECT TRANSISTOR

被引：13

作者：

REVESZ, AG ^{[1
]}

机构：

[1] COMMUN SATELLITE CORP LABS, CLARKSBURG, MD 20734 USA

来源：

THIN SOLID FILMS | 1977年 / 41卷 / 02期

关键词：

D O I：

10.1016/0040-6090(77)90393-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L43 / L47

页数：5

共 18 条

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[8]

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[9]

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[10] ANODIC OXIDATION OF SILICON - EFFECTS OF WATER ON OXIDE PROPERTIES [J].

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