MONOLITHICALLY INTEGRATED THERMOELECTRIC CONTROLLED LASER DIODE

[1] [Anonymous], 1977, SEMICONDUCTOR LASERS

[2] EFFECTS OF CONTACT RESISTANCE AND DOPANT CONCENTRATION IN METAL - SEMICONDUCTOR THERMOELECTRIC COOLERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (03) : 521 - 525

[3] MONOLITHICALLY PELTIER-COOLED LASER-DIODES [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1984, 2 (02) : 175 - 180

[4] HENRY CR, UNPUB

[5] ISHIKAWA H, 1981, ELECTRON LETT, V17, P415

[6] THERMAL RESISTANCE OF HETEROSTRUCTURE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 855 - 862

[7] GAIN, FREQUENCY BANDWIDTH, AND SATURATION OUTPUT POWER OF ALGAAS DH LASER-AMPLIFIERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (06) : 1028 - 1034

[8] OKOSHI T, 1984, J LIGHTWAVE TECH, V2, P241

[9] RECEIVER DESIGN FOR DIGITAL FIBER OPTIC COMMUNICATION SYSTEMS .1. [J]. BELL SYSTEM TECHNICAL JOURNAL, 1973, 52 (06): : 843 - 874

[10] VANDERZIEL A, 1976, SOLID STATE PHYSICAL, P491

[1] [Anonymous], 1977, SEMICONDUCTOR LASERS

[2] EFFECTS OF CONTACT RESISTANCE AND DOPANT CONCENTRATION IN METAL - SEMICONDUCTOR THERMOELECTRIC COOLERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (03) : 521 - 525

[3] MONOLITHICALLY PELTIER-COOLED LASER-DIODES [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1984, 2 (02) : 175 - 180

[4] HENRY CR, UNPUB

[5] ISHIKAWA H, 1981, ELECTRON LETT, V17, P415

[6] THERMAL RESISTANCE OF HETEROSTRUCTURE LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 855 - 862

[7] GAIN, FREQUENCY BANDWIDTH, AND SATURATION OUTPUT POWER OF ALGAAS DH LASER-AMPLIFIERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (06) : 1028 - 1034

[8] OKOSHI T, 1984, J LIGHTWAVE TECH, V2, P241

[9] RECEIVER DESIGN FOR DIGITAL FIBER OPTIC COMMUNICATION SYSTEMS .1. [J]. BELL SYSTEM TECHNICAL JOURNAL, 1973, 52 (06): : 843 - 874

[10] VANDERZIEL A, 1976, SOLID STATE PHYSICAL, P491