A DEVICE MODEL FOR METAL-SEMICONDUCTOR METAL PHOTODETECTORS AND ITS APPLICATIONS TO OPTOELECTRONIC INTEGRATED-CIRCUIT SIMULATION

被引：41

作者：

SANO, E

机构：

[1] NTT LSI Laboratories, Atsugi-shi 243-01

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 09期

关键词：

D O I：

10.1109/16.57157

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Poisson’s equation, current-continuity equations, and a rate equation for charged traps are numerically solved in two dimensions, to explain the behavior of photo-generated carriers and electric fields in GaAs metal-semiconductor-metal photodetectors (MSM PD’s). An analytical model is proposed on the basis of these solutions and implemented in a SPICE-like circuit simulator. Simulated transient responses for an MSM PD and a monolithic optoelectronic receiver, consisting of an MSM PD and a MESFET transimpedance amplifier, are in good agreement with measured results. © 1990 IEEE

引用

页码：1964 / 1968

页数：5

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