ENERGETICS IN THE INITIAL-STAGE OF OXIDATION OF SILICON

被引：29

作者：

MIYAMOTO, Y

OSHIYAMA, A

机构：

[1] Fundamental Research Laboratories, NEC Corporation, Miyukigaoka

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.43.9287

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present microscopic calculations of the energetics in the initial stage of oxidation of Si. We find that an O2 molecule penetrates the oxygen-covered surface, dissociates near a bond-center site, and forms a peculiar bond configuration with Si atoms exothermically. We also find that the bond formation results in several oxidation states of the Si atoms at the interface and in a swelling of the Si-O-Si bond network from the surface.

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页码：9287 / 9290

页数：4

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