DIMER-VACANCY-DIMER-VACANCY INTERACTION ON THE SI(001) SURFACE - THE NATURE OF THE 2XN STRUCTURE

被引：48

作者：

MEN, FK

SMITH, AR

CHAO, KJ

ZHANG, ZY

SHIH, CK

机构：

[1] UNIV WISCONSIN, DEPT MAT SCI & ENGN, MADISON, WI 53706 USA

[2] OAK RIDGE NATL LAB, DIV SOLID STATE, OAK RIDGE, TN 37831 USA

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.52.R8650

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An increase of dimer vacancies on the Si(001)-2X1 surface after radiation quenching from high temperatures has been observed using STM. After further quenches, vacancies nucleate into chains running perpendicular to the dimer rows. These vacancy chains then connect and develop into vacancy lines (VL's) that extend for many thousands of Angstrom. Each VL consists of mainly two types of dimer vacancies: a divacancy and the combination of a single vacancy and a divacancy separated by an isolated dimer. All the VL's together with the dimer rows form a 2Xn structure with 6 less than or equal to n less than or equal to 12. Calculations using the Stillinger-Weber potential have been performed to examine the ordering mechanism of dimer vacancies.

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收藏

页码：R8650 / R8653

页数：4

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