RANDOM AND ORDERED DEFECTS ON ION-BOMBARDED SI(100)-(2X1) SURFACES

被引：88

作者：

FEIL, H ^{[1
]}

ZANDVLIET, HJW ^{[1
]}

TSAI, MH ^{[1
]}

DOW, JD ^{[1
]}

TSONG, IST ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS & ASTRON,TEMPE,AZ 85287

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.69.3076

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Scanning tunneling microscopy (STM) images of Si(100)-(2 x 1) surfaces bombarded by low-dose 3-keV Ar+ ions showed random defects which ordered into line defects perpendicular to the dimer rows upon annealing at elevated temperatures. Molecular-dynamics simulations were performed to explain the shapes and sizes of the observed random defects and also to examine the stability of ordered defects. Our simulations showed good agreement with STM observations.

引用

页码：3076 / 3079

页数：4

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