DAMAGE EFFECTS OF ION ATOM BEAM MILLING ON MNOS (AL/SI3N4/SIO2/SI) CAPACITORS

被引:1
作者
BANGERT, U
BELSON, J
WILSON, IH
机构
关键词
D O I
10.1016/0168-583X(84)90093-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:370 / 373
页数:4
相关论文
共 7 条
[1]   MEASUREMENTS OF INTERFACE STATE DENSITY IN MNOS STRUCTURES [J].
ARNOLD, E ;
SCHAUER, H .
APPLIED PHYSICS LETTERS, 1978, 32 (05) :333-335
[2]  
BOLLINGER LD, 1977, SOL ST TECHNOL, V66
[3]   PROPERTIES AND APPLICATIONS OF SADDLE-FIELD ION SOURCES [J].
FRANKS, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :181-183
[4]  
HEMMENT PLF, 1977, I PHYS C SER, V38, P117
[5]   EFFECTS OF IONIZING RADIATION ON OXIDIZED SILICON SURFACES AND PLANAR DEVICES [J].
SNOW, EH ;
GROVE, AS ;
FITZGERALD, DJ .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07) :1168-+
[6]   ABSORPTION-EDGE AND ION-BOMBARDMENT OF SILICON-NITRIDE [J].
STEIN, HJ .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3421-3426
[7]   ELECTRON AND HOLE TRANSPORT IN CVD SI3N4 FILMS [J].
YUN, BH .
APPLIED PHYSICS LETTERS, 1975, 27 (04) :256-258