MEASUREMENTS OF INTERFACE STATE DENSITY IN MNOS STRUCTURES

[1] SURFACE CHARGES AND SURFACE POTENTIAL IN SILICON SURFACE INVERSION LAYERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) : 1003 - &

[2] CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICON [J]. APPLIED PHYSICS LETTERS, 1968, 13 (12) : 413 - +

[3] NONVOLATILE SEMICONDUCTOR MEMORY DEVICES [J]. PROCEEDINGS OF THE IEEE, 1976, 64 (07) : 1039 - 1059

[4] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[5] SIMPLE TECHNIQUE FOR DETERMINATION OF CENTROID OF NITRIDE CHARGE IN MNOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1975, 27 (05) : 282 - 284

[6] MEASUREMENTS OF CHARGE PROPAGATION IN SI3N4 FILMS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (06) : 340 - 342

[1] SURFACE CHARGES AND SURFACE POTENTIAL IN SILICON SURFACE INVERSION LAYERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) : 1003 - &

[2] CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICON [J]. APPLIED PHYSICS LETTERS, 1968, 13 (12) : 413 - +

[3] NONVOLATILE SEMICONDUCTOR MEMORY DEVICES [J]. PROCEEDINGS OF THE IEEE, 1976, 64 (07) : 1039 - 1059

[4] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[5] SIMPLE TECHNIQUE FOR DETERMINATION OF CENTROID OF NITRIDE CHARGE IN MNOS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1975, 27 (05) : 282 - 284

[6] MEASUREMENTS OF CHARGE PROPAGATION IN SI3N4 FILMS [J]. APPLIED PHYSICS LETTERS, 1974, 25 (06) : 340 - 342